^emi-conaucko'i ipioducti, una. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 silicon planar epitaxial transistors pnp transistors in to-39 metal envelopes for general industrial applications. quick reference data bfx87 BFX88 collector-base voltage (open emitter) collector-emitter voltage (open base) collector current (peak value) total power dissipation up to tamb = 25 c dc current gain -lc= 10ma; -vce- 10v transition frequency at f = 100 mhz ~lc - 50 ma; -vce = 10 v mechanical data fig.1 to-39. -vcbo -vceo -'cm ptot hfe ft max. max. max. max. min. tvp. min. bfx87 50 50 600 600 125 100 BFX88 40 40 600 600 125 100 v v ma mw mhz dimensions in mm collector connected to case t 8.s max 1 "l 6.6 max maximum lead diameter is guaranteed only for 12.7 mm. nj semi-conductors reserves the right to change test condidons. parameters limits and package dimensions without notice information famished by nj semi-conductors is believed to be both accurate and reliable at the time ofgoing to press. however nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
bfx87 BFX88 ratings limiting values in accordance with the absolute maximum system (iec134) collector-base voltage (open emitter) collector-emitter voltage (open base) collector current (dc) collector current (peak value) emitter current total power dissipation up to tamt, = 25 c storage temperature range junction temperature thermal resistance from junction to ambient in free air characteristics collector cut-off current -vcb = 30v;ie = 0 -vcb = 40 v; ie = 0; tj - 100 c -vcb ~ 30 v; ie - 0; tj = 100 c emitter cut-off current -veb-4.0v;ic"0 -veb-3.0v;ic = 0 -vcbo -vceo -"c -'cm 'em ptot tstg tj rthj-a -icbo -icbo -'cbo -'cbo -icbo -'ebo -'ebo max. max. max. max. max. max. bfx87 50 50 BFX88 600 600 600 600 -65to + max. = typ. max. typ. max. typ. max. typ. max. typ. max. typ. max. typ. max. 40 40 150 + 200 300 bfx87 1.0 500 0.5 50 : 0.03 2.0 _ 2.0 500 1.0 100 BFX88 : 1.0 500 0.5 50 ? 0.03 2.0 v v ma ma ma mw c c k/w na na na na na na m ma /ia m na na na na
bfx87 BFX88 dc current gain . .? -lc=1.0ma;-vce = 10v hfe typ' 1q5 -ic = 10ma;-vce = 10v hfe ^ ^ -ig = 150ma;-vce = iov hfe ?pn- jo -ic = 500ma;-vce = 10v hfe ^ jjj collector-emitter saturation voltage q 15 v -ic = 150ma;-ib = 15ma -vce(sat) max. q'aq v base-emitter saturation voltage ? ^^ y -lc=30ma;-lb=1.0ma -vbe(sat) max. 0^90 v -lc = 150ma; -1b = 15ma -vbe(sat) ^ \^ ^ co i lector capacitance rn f -vcb-10v;le = le = 0;f=1.0mhz cc ^ ? ^ emitter capacitance 8 p -veb-2.0v;lc=lc=0;f=1.0mhz ce transition frequency -lc=50ma;-vce = 10v;f=100mhz; 'amb~25 c tt typ. 360 mhz saturated switching times 25 n turn-ntime 'n max. 60 n! _ ? .. typ. 55 ns turn-off time t0ff 'r dtt max. 150 ns h-parameters measured at -lc = 10 ma; -vce = 10 v; f = 1.0 khz; tamb = 25 c input impedance hje typ, 600 si voltage feedback ratio hre typ. 1.50x10'4 forward current transfer ratio hfe typ. 155 output admittance hoe typ. 104 /jmho
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